分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer-scale 4H-SiC thin film on insulator (4H-SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are essential for scalable quantum photonics. Here we demonstrate hybrid integration of self-assembled InGaAs quantum dots (QDs) based single-photon sources (SPSs) with wafer-scale 4H-SiC photonic chips prepared by ion slicing technique. By designing a bilayer vertical coupler, we realize generation and highly efficient routing of single-photon emission in the hybrid quantum photonic chip. Furthermore, we realize a chip-integrated beamsplitter operation for triggered single photons through fabricating a 1x2 multi-mode interferometer (MMI) with a symmetric power splitting ratio of 50:50. The successful demonstration of heterogeneously integrating QDs-based SPSs on 4H-SiC photonic chip prepared by ion slicing technique constitutes an important step toward CMOS-compatible, fast reconfigurable quantum photonic circuits with deterministic SPSs.
分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of many unconventional nonlinear optical phenomenon with high efficiencies. Here, we demonstrate an ultra-high Q factor (7.1*10^6) microresonator on the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform in which both \c{hi}^(2) and \c{hi}^(3) nonlinear processes of high efficiencies have been generated. Broadband frequency conversions, including second-, third-, fourth-harmonic generation were observed. Cascaded Raman lasing was demonstrated in the SiC microresonator for the first time to the best of our knowledge. Broadband Kerr frequency combs covering from 1300 to 1700 nm were achieved using a dispersion-engineered SiC microresonator. Our demonstration is a significant milestone in the development of SiC photonic integrated devices.
分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: The foundry development of integrated photonics has revolutionized today's optical interconnect and datacenters. Over the last decade, we have witnessed the rising of silicon nitride (Si$_3$N$_4$) integrated photonics, which is currently transferring from laboratory research to foundry manufacturing. The development and transition are triggered by the ultimate need of low optical loss offered by Si$_3$N$_4$, which is beyond the reach of silicon and III-V semiconductors. Combined with modest Kerr nonlinearity, tight optical confinement and dispersion engineering, Si$_3$N$_4$ has today become the leading platform for linear and Kerr nonlinear photonics, and has enabled chip-scale lasers featuring ultralow noise on par with table-top fiber lasers. However, so far all the reported fabrication processes of tight-confinement, dispersion-engineered Si$_3$N$_4$ photonic integrated circuit (PIC) with optical loss down to few dB/m have only been developed on 4-inch or smaller wafers. Yet, to transfer these processes to established CMOS foundries that typically operate 6-inch or even larger wafers, challenges remain. In this work, we demonstrate the first foundry-standard fabrication process of Si$_3$N$_4$ PIC with only 2.6 dB/m loss, thickness above 800 nm, and near 100% fabrication yield on 6-inch wafers. Such thick and ultralow-loss Si$_3$N$_4$ PIC enables low-threshold generation of soliton frequency combs. Merging with advanced heterogeneous integration, active ultralow-loss Si$_3$N$_4$ integrated photonics could pave an avenue to addressing future demands in our increasingly information-driven society.